METHOD OF FORMING SHALLOW TRENCH ISOLATION IN THE SEMICONDUCTOR MANUFACTURING PROCESS AND SEMICONDUCTOR DEVICE INCLUDING THE SHALLOW TRENCH ISOLATION

摘要

A method for forming a shallow trench isolation and a semiconductor device having the shallow trench isolation are provided to prevent a defect of bullet hole by rounding corners of a bottom portion of the shallow trench isolation through a dry etching and wet etching. An etching mask is formed to expose first and second regions on a substrate(10). The substrate is dry etched by using the etching mask to form a first trench region(40), in which the first and second regions are removed. The substrate between the first and the second regions are wet etched to form a second trench region(70). An insulation layer is formed in the second trench. The etching mask consists of a pad oxide layer(20) and a nitride layer(30).