METHOD OF FORMING METAL NANOCRYSTALS IN SIO2 FILMS

摘要

A method for forming metal nanocrystals in SiO2 films is provided to form metal nanocrystals in SiO2 films more simply, be capable of controlling the size of the metal nanocrystals, and be useful for manufacturing highly efficient flash memory devices. A method for forming metal nanocrystals in SiO2 films includes the steps of: depositing at least one metal oxide selected from the group consisting of ZnO, Cu2O, SnO2, TiO2, ZrO2, Al2O3, Ga2O3, In2O3, CrO2, and Fe2O3 on a silicon substrate in a thickness of 10-100nm; (ii) heat-treating the metal oxide-deposited silicon substrate at 600-900°C; and (iii) irradiating the heat-treated metal oxide-deposited silicon substrate with an electronic beam for 1-2hours.