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Bolometric detector, a device for infrared detection, use such a detector, and the method of production of detectors
Bolometric detector, a device for infrared detection, use such a detector, and the method of production of detectors
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机译:测光检测器,用于红外线检测的设备,使用该检测器的方法以及检测器的制造方法
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1.u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 containing sensitive part or the membrane containing one or more layers sensitive mater: u0438u0430u043bu0430 (6), a specific resistance which varies with temperature; the first u044du043bu0435u043au0442u0440u043eu043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 elements electrically united with the grid (1) u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data u0441u0432u00a0u0437 anna with u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u043c detector and operating with one handas the electrodes of the detector and the u0434u043bu00a0 u043du0430u0445u043eu0434u00a0u0449u0438u0435u0441u00a0 u0434u043bu00a0 it in contact with the sensitive material (6) and, on the other hand, acting as a u043fu043eu0433u043bu043eu0442u0438u0442u0435u043bu00a0 er u043bu0435u043au0442u0440u043eu043cu0430u0433u043du0438u0442u043du043eu0433u043e u0438u0437u043bu0443u0447u0435u043du0438u00a0; second u044du043bu0435u043au0442u0440u043eu043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 elements with floating potential, existing only as a scavenger of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 for less a least one support area (3) u0434u043bu00a0 sensitive partu0432u044bu043fu043eu043bu043du00a0u044eu0449u0443u044e function u043fu043eu0437u0438u0446u0438u043eu043du0438u0440u043eu0432u0430u043du0438u00a0 the sensitive part and the electric conductor on the circuit u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data; at least e, one u0442u0435u0440u043cu043eu0438u0437u043eu043bu0438u0440u0443u044eu0449u0443u044e structure (4), electrically and mechanically u0441u0432u00a0u0437u044bu0432u0430u044eu0449u0443u044e each supporting area (3) with the sensitive part of the u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, province; u043eu0434u00a0u0449u0438u0435 elements distributed in the form of two u043fu0435u0440u0435u0441u0435u043au0430u044eu0449u0438u0445u0441u00a0,superimposed on each other nets (5a, 5b) u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0445 tracks, with u043fu0435u0440u0432u0430u00a0 (5a) of the two nets contains all of the elements of the first u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435.;2. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on 1, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, nets (5a) and (5b) fully or partially superimposed on each other.;3. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on 1 or 2, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, u0443u043au0430u0437u0430u043du043du0430u00a0 u043fu0435u0440u0432u0430u00a0 grid (5a) also contains a second u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 elements, but p on at least two (5u04301, 5u04302, 5u04303, 5u04304) of u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0445 tracks that u0441u043eu0441u0442u0430u0432u043bu00a0u044eu0442, u043du0430u0445u043eu0434u00a0u0442u0441u00a0 in contact with the sensitive material (6), u0441u043eu0441u0442u0430u0432u043bu00a0u044eu0449u0438u043c sensitive cha ism. essentially throughout their length.;4. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.3, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 so that at least two u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 tracks the second grid (5b) u043du0430u0445u043eu0434u00a0u0442u0441u00a0 in u0447u0435u0440u0435u0434u0443u044eu0449u0435u043c u0441u00a0 contact with these special lanes (5u04301, 5u04302, 5u04303, 5u04304) of the first grid (5a), u043au043eu0442u043eu0440u0430u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 in contact with the sensitive material (6), u0441u043eu0441u0442u0430u0432u043bu00a0u044eu0449u0438 m a sensitive part.;5. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on 1 or 2, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 so that appropriate u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 tracks of each of the two nets (5a, 5b) u00a0u0432u043bu00a0u044eu0442u0441u00a0 ol u00a0u043cu044bu043cu0438 and parallel to each other and the fact that u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 tracks the first grid (5a) u043du0430u0445u043eu0434u00a0u0442u0441u00a0 under u043fu0440u00a0u043cu044bu043cu0438 angles to u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043c. u0441u043eu0441u0442u0430u0432u043bu00a0u044eu0449u0438u043c second grid (5b).;6. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on 1, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, two screens (5a) and (5b) are located on the upper surface of the u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0445 tracks u00a0 sensitive material (6).;7. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.6, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because: u043fu0435u0440u0432u0430u00a0 grid (5a) u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically isolated from u0441u043bu043eu00a0 sensitive material (6) through the first u0441u043bu043eu00a0 made from ier u043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7a), a local u043eu0442u0432u0435u0440u0441u0442u0438u00a0 opposite the areas of contact between the special u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 lanes (5u04301, 5u04302, 5u04303,5u04304) of the first grid (5a) and a layer of the sensitive material (6), between the existing only as sinks (5u0430u0430) u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 paths of the first the grid (5a) and (5b) of the second u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 paths mesh is the second layer of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b), and the contact between the special lanes (5u04301, 5u04302 , 5u04303,5u04304) to the first grid (5a) and some u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 paths the second grid (5) received in the u043eu0442u0432u0435u0440u0441u0442u0438u00a0u0445. (8) of the second layer u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b).;8. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on 1, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because one of the nets (5a, 5b) located under a layer of a sensitive material (6), and u0434u0440u0443u0433u0430u00a0 mesh located above the layer of the sensitive material (6).;9. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.8, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because: u043fu0435u0440u0432u0430u00a0 grid (5a) is located under a layer of the sensitive material (6) and u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically insulated from the latter by first wow u0441u043bu043eu00a0 made from u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7a), a local u043eu0442u0432u0435u0440u0441u0442u0438u00a0 opposite the areas of contact between the special u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 lanes (5u04301 , 5u04302, 5u04303,5u04304) of the first grid (5a) and a layer of the sensitive material (6); u0432u0442u043eu0440u0430u00a0 grid (5b) located over the layer of the sensitive material (6) and u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically from the u043eu043bu0438u0440u043eu0432u0430u043du043du043eu0439 from the last through the second u0441u043bu043eu00a0,made of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b), and the point of electrical contact between the u0434u0432u0443u043cu00a0 nets (5a) and (5b) are obtained by cutting holes in the u0432u044bu043fu043eu043bu043du0435u043du0438u00a0 e of the material (6) and the second layer u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b).;10. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.8, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 because: u043fu0435u0440u0432u0430u00a0 grid (5a) is located over the layer of the sensitive material (6) and u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically insulated from the latter by first wow u0441u043bu043eu00a0 made from u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7a), a local u043eu0442u0432u0435u0440u0441u0442u0438u00a0 opposite the areas of contact between the special lanes (5u04301, 5u04302, 5u04303,5u04304) of the first grid (5a) and u0441u043bu043eu00a0 sensitive material (6); u0432u0442u043eu0440u0430u00a0 grid (5b) located under a layer of the sensitive material (6) and u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically out u043bu0438u0440u043eu0432u0430u043du043du043eu0439 from the last through the second u0441u043bu043eu00a0,made of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7); and the point of electrical contact between the u0434u0432u0443u043cu00a0 nets (5a) and (5b) are obtained by cutting holes in u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 the layer of material (6) and the second layer u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b).;11. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector for electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 p.6 or 8, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 so that all u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0435 tracks (5a) of the first grid u043du0430u0445u043eu0434u00a0u0442u0441u00a0 in contact with a layer of u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (6).;12. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 11, so that u0443u043au0430u0437u0430u043du043du0430u00a0 grid (5a) is located over the layer of the sensitive material (6); a layer of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b) is located between the u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 the lanes of the first grid (5a) and (5b) of the second u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 paths mesh; and the contact between the first grid u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043cu0438 paths (5a) and some provo u0434u00a0u0449u0438u043cu0438 tracks the second grid (5b) is u043eu0442u0432u0435u0440u0441u0442u0438u00a0u0445 (8)of the u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu043c layer (7b).;13. u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 detector of electromagnetic u0438u0437u043bu0443u0447u0435u043du0438u00a0 on p.u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 11, so that u0443u043au0430u0437u0430u043du043du0430u00a0 grid (5a) is located under a layer of the sensitive material (6); u0432u0442u043eu0440u0430u00a0 grid (5b) located over the layer of the sensitive material 6) and u00a0u0432u043bu00a0u0435u0442u0441u00a0 electrically isolated from the latter by u0441u043bu043eu00a0,carried out from the u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b); points of electrical contact between the u0434u0432u0443u043cu00a0 nets (5a) and (5b) are obtained by cutting holes in the layer u0432u044bu043fu043eu043bu043du0435u043du0438u00a0 cc u0430u0437u0430u043du043du043eu0433u043e material (6) and a layer of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b).;14. the device u0434u0435u0442u0435u043au0442u0438u0440u043eu0432u0430u043du0438u00a0 infrared u0438u0437u043bu0443u0447u0435u043du0438u00a0 u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e type u043eu0442u043bu0438u0447u0430u044eu0449u0435u0435u0441u00a0 because it uses one or more sensors for u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0445 any of the u043fu043f.1 - 13, and the detector (detector) is connected (connected) to the u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data (1) through the structure type of bar (3).;15. the device u0434u0435u0442u0435u043au0442u0438u0440u043eu0432u0430u043du0438u00a0 infrared u0438u0437u043bu0443u0447u0435u043du0438u00a0 u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e type on p.14, u043eu0442u043bu0438u0447u0430u044eu0449u0435u0435u0441u00a0 because it has structure in the form of array containing, at m u0435u0440u0435, two u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0445 detector.;16.method u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 detector of infrared u0438u0437u043bu0443u0447u0435u043du0438u00a0 u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e type comprising a u0441u0435u0431u00a0, u043du0430u0447u0438u043du0430u00a0 with schemes u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data, in particular for the the silicon product (1) stages in which: the first sacrificial layer to form the first support the silicon product.designed u0434u043bu00a0 u0443u0434u0430u043bu0435u043du0438u00a0 by any known means after u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 detector to u0442u0435u0440u043cu043eu0438u0437u043eu043bu00a0u0446u0438u0438 scheme u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data (1) of u0434u0435u0442u0435u043au0442u0438u0440u0443u044eu0449u0435u0433u043e u043cu043eu0434u0443u043bu00a0 or sensitive part; forming a layer of a sensitive material on the sacrificial layer u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e support; besieging made of d.l. u0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material layer (7a) on the sensitive layer (6); uset u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0443u044e mask and etching u0432u044bu043fu043eu043bu043du00a0u044eu0442 u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 u0443u0434u043bu0438u043du0435u043du043du044bu0445 openings of limited thickness of the layer u0434u043bu00a0 u0441u043eu0437u0434u0430u043du0438u00a0 areas of contact with the layer h u0443u0432u0441u0442u0432u0438u0442u0435u043bu044cu043du043eu0433u043e material (6) is under siege from the first layer u044du043bu0435u043au0442u0440u043eu043fu0440u043eu0432u043eu0434u00a0u0449u0435u0433u043e material; use u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0443u044e mask u0434u043bu00a0 u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 first nets (5a) u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0445 before horns, some of which are located opposite the holes.of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material layer (7a) and the u043du0430u0445u043eu0434u00a0u0449u0438u0445u0441u00a0 in electrical contact with the sensitive material (6) has u043fu0440u043eu0432u043eu0434u00a0u0449 s poles or bar (3) by u043du0430u043du0435u0441u0435u043du0438u00a0 new u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au043eu0439 masks designed u0434u043bu00a0 protection throughout the structure except the small holes.with the u043eu0442u0432u0435u0440u0441u0442u0438u00a0 u0442u0440u0430u0432u00a0u0442 in surface layers in the next u043fu043eu0440u00a0u0434u043au0435: u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0439 material (5a), a dielectric material (7a), (6 u0431u043eu043bu043eu043cu0435u0442u0440u0438u0447u0435u0441u043au0438u0439 material ), then through sacrificial layer to the surface contact, the previously executed on the surface pattern (1) u0441u0447u0438u0442u044bu0432u0430u043du0438u00a0 data, then by u043eu0441u0430u0436u0434u0435u043du0438u00a0 at me re, a metal u0441u043bu043eu00a0,then, by u0442u0440u0430u0432u043bu0435u043du0438u00a0 this / these metal u0441u043bu043eu00a0 (layers) by u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au043eu0439 masks in the side of the pillars (3); a second layer of material u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e besieging a (7b) on the screen (5a); use u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0443u044e mask and etching u0432u044bu043fu043eu043bu043du00a0u044eu0442 u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 holes (8) in the u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu043c layer (7b) located on the wire u00a0u0449u0438u0445 tracks nets (5a).u043au043eu0442u043eu0440u0430u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 in contact with the sensitive material (6); a second layer of material on a layer u044du043bu0435u043au0442u0440u043eu043fu0440u043eu0432u043eu0434u00a0u0449u0435u0433u043e besieging u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043eu0433u043e material (7b); use t u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0443u044e mask u0434u043bu00a0 u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 second grid (5b) u043fu0440u043eu0432u043eu0434u00a0u0449u0438u0445 paths, essentially based on u043fu0440u00a0u043cu044bu043c angle on.u0441u043eu0441u0442u0430u0432u043bu00a0u044eu0449u0438u0445 first grid (5a); use u043bu0438u0442u043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0443u044e mask and etching u0432u044bu043fu043eu043bu043du00a0u044eu0442 u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 supporting console (4) and a peripheral circuit u043cu0435u043cu0431 u043eu043fu0440u0435u0434u0435u043bu0435u043du0438u00a0 the wound or sensitive part of the detector; and, finally, u0443u0434u0430u043bu00a0u044eu0442 sacrificial layer so that the membrane or u0447u0443u0432u0441u0442u0432u0438u0442u0435u043bu044cu043du0430u00a0 part was hung on substrate (1).
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