Doping process used in the production of a transistor, IGBT, thyristor or diode comprises preparing a semiconductor body, producing crystal defects in the body, introducing hydrogen ions into the body, and heat treating

摘要

Doping process comprises preparing a semiconductor body (2) with a base dopant of first conductivity, producing crystal defects in the semiconductor body, introducing hydrogen ions from a first surface (3, 4) into the semiconductor body, and heat treating in which temperature and duration are selected so that hydrogen atoms are introduced over the whole crystal defect region of the semiconductor body. An independent claim is also included for a semiconductor component produced by the above process.