Production of a semiconductor component structure used as a diode or MOSFET comprises preparing a semiconductor body, forming a doped trenched semiconductor zone in the semiconductor body, and removing the semiconductor body

摘要

Production of a semiconductor component structure comprises preparing a semiconductor body (100) having a front side (101) and a rear side (102) and having a base doping, forming a doped trenched semiconductor zone (12) having a higher doping than the base doping in the semiconductor body, and removing the semiconductor body from the rear side up to the trenched semiconductor zone.