Non-volatile memory cell e.g. flash memory cell, for semiconductor device, has transistors reducing leakage currents that flow through non-volatile programmable resistors, respectively

摘要

The memory cell (500) has two transistors (501, 502) whose source and drain connections are, respectively, coupled with nodes (503, 504). Transistors (509, 510) reduce leakage currents, which flow through non-volatile programmable resistors (507, 508), respectively. Source or drain connections of the resistors are coupled with connectors of the resistors or with connectors of the transistor (501, 502), respectively. An independent claim is also included for a semiconductor device with a non-volatile memory cell.