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Method for the integration of functional nanostructures in micro - and nano electrical circuits

机译:在纳米和纳米电路中集成功能纳米结构的方法。

摘要

The present invention relates to a process for producing at least a nanostructure (9) on a substrate (17). It is intended in a particularly simple and effective manner long distances is bridged and branched structures are created. In this case, the generated nanostructure (9) is a multiple of the length of an individual object of nano have. The object is achieved by means of a multiplier electrodes structure (11), in which the projecting electrode areas electrode fingers (21), the ends facing away from the electrode (5) are arranged along a line in such a way that the electrode fingers (21) does not engage in one another and in which at least three electrodes (1; 13, 15) are formed. There is a dielectrophoretic depositing separate nano object accumulations (7) in each case along the line between the adjacent ends (5). In this way can be particularly advantageously be produced for a long nanostructures.
机译:本发明涉及在基底(17)上至少生产纳米结构(9)的方法。旨在以特别简单和有效的方式桥接长距离并创建分支结构。在这种情况下,产生的纳米结构(9)是纳米物体的单个物体的长度的倍数。该目的通过倍增电极结构(11)实现,其中,突出的电极区域电极指(21),背向电极(5)的端部沿着一条线布置成使得电极指电极(21)彼此不接合并且其中至少形成三个电极(1、13、15)。在每种情况下,沿着相邻的末端(5)之间的线,介电电泳沉积单独的纳米物体累积物(7)。以这种方式可以特别有利地制造出长的纳米结构。

著录项

  • 公开/公告号DE102005038121B3

    专利类型

  • 公开/公告日2007-04-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20051038121

  • 发明设计人

    申请日2005-08-11

  • 分类号H01L21/768;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:52

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