Manufacturing semiconductor elements by producing different mechanical shaping in different substrate fields by producing layers with different modified inner voltage

摘要

Manufacturing integrated circuits where a first dielectric layer is formed with a first intrinsic mechanical voltage over a first and second substrate field where the first field (150L) has a first p-channel transistor (100P) and first n channel transistor (100N) and the second field has a second p and a second n channel transistor. The intrinsic mechanical voltage in the second transistors of the second substrate field is modified by modifying the first dielectric layer whilst the first transistor is masked. An area of the first dielectric layer is selectively removed to expose the first p or first n transistor of the first substrate field. A second dielectric layer with second intrinsic mechanical voltage is formed over the first and second substrate fields with this second intrinsic voltage differing from the first. The intrinsic voltage is modified in the second substrate field and in the non-exposed transistor of the first p or first n channel transistors (100N) in the first substrate field by modifying the second dielectric layer. Independent claim describes semi conductor component with a first component field with several first p and n channel transistors forming first functions block), a similarly formed second function block and a first and second dielectric layer with different intrinsic voltage values.