Metallic layer manufacturing method for manufacturing e.g. integrated circuit, involves implementing electroless wet-chemical precipitating process, and producing electrical field in electrolytic solution to precipitate metal

摘要

The method involves precipitating a metal over a structured layer of a semiconductor component (100) by applying an electrolytic solution and implementing an electroless wet-chemical precipitating process. An externally produced electrical field is produced in the electrolytic solution when the electrolytic solution is applied to precipitate the metal. A catalytic process is implemented at free-lying surface areas of a structured layer. A barrier layer (105) is provided with connections having cobalt, tungsten, phosphor, boron, nickel and molybdenum.