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Power semiconductor module, has base plate serving as support, where semiconductor unit is attached with bottom side of the substrate on upper side of base plate, and base plate is made of composite material with metallic material
Power semiconductor module, has base plate serving as support, where semiconductor unit is attached with bottom side of the substrate on upper side of base plate, and base plate is made of composite material with metallic material
The module has a semiconductor unit (40) with a semiconductor component (30) provided on an upper side (20a) of a substrate (20). A base plate (10) serves as a support, where the semiconductor unit is attached with a bottom side (20b) of the substrate on an upper side (10a) of the base plate. The base plate is made of a composite material with a metallic material (11`), and an insert (12) is made of aluminum/silicon carbide material (12`) in the metallic material.
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