Electric structure for e.g. dynamic RAM, has layer area arranged at surface area of solid electrolyte layer and electrode layer, where layer area exhibits oxygen concentration higher than that of solid electrolyte layer and electrode layer

摘要

The structure (1) has a solid electrolyte layer (3) partially covered with an electrode layer (2). The solid electrolyte layer is located on another electrode layer (4). The layer (4) is located on a substrate (6) e.g. semiconductor wafer. A layer area (7) is arranged at a boundary surface area of the solid electrolyte layer and the electrode layer. The layer area exhibits an oxygen concentration higher than that of solid electrolyte layer and the electrode layer. Independent claims are also included for the following: (1) a method for manufacturing an electrical structure (2) a method for manufacturing a memory.