Semiconductor module, has plumb layer forming layer compound together with substrate underside-metallization layer, where edges of layer compound are formed such that radii of edges lie in specific range

摘要

The module has a direct copper bonding (DCB) substrate arranged on a carrier plate (2) and serving as a carrier for a semiconductor unit e.g. insulated gate bipolar transistor (IGBT). The substrate has a substrate underside-metallization layer (6) and a substrate layer (3). A plumb layer (5) is provided between the substrate and the carrier plate such that the plumb layer forms a layer compound (4) together with the substrate underside-metallization layer. Edges of the layer compound are formed such that radii of the edges lie in a specific range.