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Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area
Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area
The component has a semiconductor body (1) of conduction type in an active area (2) and a peripheral area (3). The peripheral area has a reduced surface field (RESURF) semiconductor layer extending outward laterally from active area. The endowment strength of RESURF-semiconductor layer is smaller than endowment strength of part of active area, which directly adjoins to peripheral area borders. A circular semiconductor area of former conduction type, embedded in the RESURF-semiconductor layer, is provided at a distance from each other. Each circular semiconductor area encloses active area.
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