首页> 外国专利> Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area

Semiconductor component has semiconductor body of conduction type in active area and peripheral area, peripheral area has reduced surface field semiconductor layer extending outward laterally from active area

机译:半导体部件在有源区域和外围区域中具有导电类型的半导体本体,外围区域具有减小的表面场半导体层,该半导体场从有源区域横向向外延伸。

摘要

The component has a semiconductor body (1) of conduction type in an active area (2) and a peripheral area (3). The peripheral area has a reduced surface field (RESURF) semiconductor layer extending outward laterally from active area. The endowment strength of RESURF-semiconductor layer is smaller than endowment strength of part of active area, which directly adjoins to peripheral area borders. A circular semiconductor area of former conduction type, embedded in the RESURF-semiconductor layer, is provided at a distance from each other. Each circular semiconductor area encloses active area.
机译:该部件在有源区域(2)和外围区域(3)中具有导电类型的半导体本体(1)。外围区域具有减小的表面场(RESURF)半导体层,该半导体层从有源区域横向向外延伸。 RESURF半导体层的end赋强度小于活动区域部分的end赋强度,该区域直接邻接外围区域边界。彼此间隔一定距离地提供嵌入RESURF-半导体层中的先前导电类型的圆形半导体区域。每个圆形半导体区域包围有源区域。

著录项

  • 公开/公告号DE102006023598B3

    专利类型

  • 公开/公告日2007-11-08

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AUSTRIA AG;

    申请/专利号DE20061023598

  • 发明设计人 SCHMIDT GERHARD;

    申请日2006-05-19

  • 分类号H01L29/06;H01L29/861;H01L29/74;H01L29/739;H01L29/80;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:17

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号