Semiconductor component e.g. MOS LDD type transistor - has element separating insulating layer which surrounds active region at peripherally identical height on main substrate surface

摘要

The insulating layer (5, 6) surrounds an active region at an identical peripheral height. It is formed on the main surface of the semiconductor substrate (1), separately insulating the active regions. A semiconductor layer is flatly deposited on the surrounded active region, and has a height equal to that of the insulating layer. Thus, there are no steps towards the insulating layer. The semiconductor layer surface forms the element region. Pref. the insulating layer has a field screening structure, contg. a field screening element (5) of a polysilicon layer (3), formed on the substrate main surface with an interposed silicon oxide layer (2). USE/ADVANTAGE - For integrated semiconductor components, without defocussing during lithographic process.