首页> 外国专利> Semiconductor memory module e.g. fully buffered dual inline memory module, has two sets of memory devices arranged in two rows on module board, and third set of memory devices arranged in third row which extends between two rows, on board

Semiconductor memory module e.g. fully buffered dual inline memory module, has two sets of memory devices arranged in two rows on module board, and third set of memory devices arranged in third row which extends between two rows, on board

机译:半导体存储模块全缓冲双列直插式内存模块,在模块板上有两组存储设备,每行两行,在板上有第三组存储设备,第三行在两行之间延伸

摘要

The module has a module board (MP) with two ends (EMP1, EMP2) running along a direction. Three sets of semiconductor memory devices (P1-P18) are provided, and each device has two ends with different lengths. The two sets of devices are arranged in two rows (R1, R2) on the board (MP), where the rows extend along the two ends of the board and the ends of the devices of the two sets run along the direction. The third set of devices is arranged in a third row (R3) on the board, and the third row extends between the two rows, and the ends of the devices of the third row run along the direction.
机译:该模块具有一个模块板(MP),其两端(EMP1,EMP2)沿一个方向延伸。提供了三组半导体存储设备(P1-P18),每个设备的两端都有不同的长度。两组设备在电路板(MP)上排成两行(R1,R2),其中这些行沿电路板的两端延伸,并且两组设备的端部沿该方向延伸。第三组设备布置在板上的第三行(R3)中,并且第三行在两行之间延伸,并且第三行的设备的端部沿该方向延伸。

著录项

  • 公开/公告号DE202007003724U1

    专利类型

  • 公开/公告日2007-05-31

    原文格式PDF

  • 申请/专利权人 QIMONDA AG;

    申请/专利号DE202007003724U1

  • 发明设计人

    申请日2007-03-13

  • 分类号G11C5/02;G11C5/06;

  • 国家 DE

  • 入库时间 2022-08-21 20:28:54

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