Metal oxide semiconductor transistor manufacture for random access static memory, by forming vias contacting a gate and source and drain regions on other side of channel region with respect to the gate

摘要

A metal oxide semiconductor (MOS) transistor is manufactured by forming vias (50, 51, 52) contacting a gate and source and drain regions (39, 41) on other side of a channel region (30) with respect to the gate. The semiconductor layer is made of silicon and has a thickness of 5-15 nm, the dopant for forming the amorphous regions being germanium implanted at a dose of 1 x10 15at/cm 2at 3-8 keV. Manufacture of a MOS transistor comprises forming an insulated gate on a portion of a semiconductor layer of a first conductivity type delimited by a periphery, forming amorphous regions on either side of a central region of the layer underlying the gate, turning over the entire structure, totally etching the amorphous regions, where recesses are formed between the central region and the periphery, and depositing in the recesses only a conductive material capable of forming the source and drain regions of the transistor, where vias contacting the gate and the source and drain regions of the transistor are formed on the other side of a channel region with respect to the gate. The semiconductor layer is made of silicon and has a thickness of 5-15 nm, the dopant for forming the amorphous regions being germanium implanted at a dose of 1 x10 15at/cm 2at 3-8 keV.