Semiconductor device with static random access memory has high concentration doping material region formed in contact with lower surface of contact plugs in source-drain areas of transistors

摘要

A contact hole is formed and aligned in the insulating layers through an intermediate-layer insulating layer, such that the contact hole reaches the source-drain areas (12d,12e) of the access and driver transistors. A high concentration doping material region is formed in contact with the lower surface of the contact plugs (16a-c) in the source-drain areas of the transistors. The access transistors (1a,1b) and driver transistors (2a,2b) of a static random access memory (SRAM) are provided on the head surface of a semiconductor substrate. The surfaces of the gate electrodes (13a,13b,13c) of the access transistors and driver transistors are coated with the corresponding insulating layers. An intermediate-layer insulating layer performs the coating of the head surface of the semiconductor substrate.