Light emitter e.g. stripe laser, for optoelectronics field, has active layer comprised between P and N type semiconductor zones and including quantum boxes placed in encapsulation layer, where encapsulation layer is electrically insulating

摘要

Emitter has P and N type semiconductor zones (62, 64), and an active layer (71) comprised between the zones. The layer has an encapsulation layer (70) and quantum boxes (68) placed in the encapsulation layer, where the encapsulation layer is electrically insulating. A resonant cavity is defined by mirrors in which the quantum boxes are unique and the active layer is contained in the cavity. Intrinsic semiconductor zones are comprised between the zones (62, 64) and constitute a PIN junction in which the active layer is placed in the intrinsic zones. An independent claim is also included for a method for manufacturing a light emitter.