METHOD OF MANUFACTURING SURFACE EMITTING TYPE SEMICONDUCTOR LASER ELEMENT, SURFACE EMITTING TYPE SEMICONDUCTOR LASER ELEMENT PRODUCED USING SAME, OPTICAL TRANSMITTING MODULE USING SAME ELEMENT, OPTICAL TRANSCEIVER MODULE, AND OPTICAL COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality and practical-level GaInNAs surface emitting type semiconductor laser element.;SOLUTION: A surface emitting type semiconductor laser element has an active area including at least one active layer (23) emitting a laser beam and resonator structure including reflection mirrors (21, 25) provided on and under the active layer for obtaining the laser beam on a semiconductor substrate (20). The active layer (23) contains Ga, In, N, and As as main components. At least lower reflection mirror of the mirrors includes a semiconductor distribution Bragg reflection mirror whose refractive index periodically varies and which reflects an incident light by light wave interference. The active layer (23) is grown in an MOCVD growth chamber. At least lower reflection mirror (21) of the reflection mirrors (21, 25) is grown either in another MOCVD growth chamber or in an MBE growth chamber.;COPYRIGHT: (C)2008,JPO&INPIT