METHOD FOR FORMING SiC, METHOD FOR FORMING FILM, METHOD FOR FORMING SiC ON CHAMBER, METHOD FOR MANUFACTURING SEMICONDUCTOR-MANUFACTURING APPARATUS, APPARATUS FOR FORMING SiC, AND FILM STRUCTURE FORMED WITH THOSE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming SiC on a substrate and an inner wall surface of a chamber.;SOLUTION: SiC is formed on the substrate 22a by the steps of: supplying silicon onto the substrate 22a in the chamber 10; simultaneously supplying a halogen-containing gas into the chamber 10; dissociating the halogen-containing gas; and supplying carbon onto the substrate 22a from a member containing carbon 20b.;COPYRIGHT: (C)2009,JPO&INPIT