首页> 外国专利> INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT WITH HIGH-SPEED NON-VOLATILE MEMORY DATA TRANSFER CAPABILITY

INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT WITH HIGH-SPEED NON-VOLATILE MEMORY DATA TRANSFER CAPABILITY

机译:集成电路装置和具有高速非易失性存储器数据传输能力的集成电路

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit device for improving the speed of transferring data between a random access memory device and a non-volatile memory device.;SOLUTION: The integrated circuit device is provided with a RAM array including a plurality of columns of RAM cells therein and a plurality of first bit lines electrically connected to the plurality of columns of RAM cells, a non-volatile memory array including a plurality of columns of non-volatile memory cells therein and a plurality of second bit lines electrically connected to the plurality of columns of non-volatile memory cells, and a data transfer circuit electrically connected to the plurality of first and second bit lines. The data transfer circuit has a bidirectional direct data transfer capability between the plurality of first bit lines and the plurality of second bit lines in the case of transferring RAM data from the plurality of first bit lines to the plurality of second bit lines while transferring non-volatile memory data from the plurality of second bit lines to the plurality of first bit lines.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种用于提高在随机存取存储设备和非易失性存储设备之间传输数据的速度的集成电路设备。解决方案:该集成电路设备设置有包括多列的RAM阵列。其中的多个RAM单元和电连接到多个列的RAM单元的多个第一位线,非易失性存储器阵列包括其中的多个列的非易失性存储单元以及电连接到多个的第二位线非易失性存储单元的多列,以及电连接到多条第一和第二位线的数据传输电路。在将RAM数据从多条第一位线传输到多条第二位线的同时,将RAM数据从多条第一位线传输到多条第二位线的情况下,数据传输电路具有在多条第一位线和多条第二位线之间的双向直接数据传输能力。从多条第二位线到多条第一位线的易失性存储器数据。版权所有:(C)2008,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号