GRAPHITE CRUCIBLE FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for stably producing a silicon carbide single crystal almost free from defects by a sublimation recrystallization method using silicon carbide as a raw material.;SOLUTION: A polytype crystal can stably be grown by forming a flow passage for discharging a gas from the inside of a crucible to the outside of the crucible in a graphite crucible for producing the silicon carbide single crystal by the sublimation recrystallization method using the silicon carbide as the raw material.;COPYRIGHT: (C)2008,JPO&INPIT