首页> 外国专利> MAGNETORESISTIVE ELEMENT, AND MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT, AND MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE ELEMENT

机译:磁致电阻元件,磁致电阻元件的制造方法以及磁致电阻元件的制造装置

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive element for improved in stability in magnetic characteristics by suppressing thermal damage to a free ferromagnetic layer, to provide a manufacturing method of the magnetoresistive element, and to provide a manufacturing apparatus of the magnetoresistive element.;SOLUTION: A diffusion barrier layer formation process (step S6) is performed after a free layer formation process (step S5), and an oxide layer (diffusion barrier layer) is formed only on the surface of the free ferromagnetic layer by oxidizing an oxygen radical. Then, a protective layer formation process (step S7) is performed after the diffusion barrier layer formation process (step S6), and a protective layer is laminated on the diffusion barrier layer.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种磁阻元件,其通过抑制对自由铁磁层的热损伤来改善磁特性的稳定性;提供一种磁阻元件的制造方法;以及提供一种磁阻元件的制造装置。 :在自由层形成工艺(步骤S5)之后执行扩散阻挡层形成工艺(步骤S6),并且通过氧化氧自由基仅在自由铁磁层的表面上形成氧化物层(扩散阻挡层)。然后,在扩散阻挡层形成工艺(步骤S6)之后执行保护层形成工艺(步骤S7),并将保护层层压在扩散阻挡层上。版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008041716A

    专利类型

  • 公开/公告日2008-02-21

    原文格式PDF

  • 申请/专利权人 ULVAC JAPAN LTD;

    申请/专利号JP20060210242

  • 申请日2006-08-01

  • 分类号H01L43/08;H01L43/12;G11B5/39;

  • 国家 JP

  • 入库时间 2022-08-21 20:22:17

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