首页> 外国专利> METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT, SOFTWARE AND SYSTEM FOR CONTROLLING MANUFACTURING OF MAGNETORESISTIVE ELEMENT, SOFTWARE FOR ESTIMATING RESISTANCE VALUE OF MAGNETORESISTIVE ELEMENT, AND COMPUTER SYSTEM

METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT, SOFTWARE AND SYSTEM FOR CONTROLLING MANUFACTURING OF MAGNETORESISTIVE ELEMENT, SOFTWARE FOR ESTIMATING RESISTANCE VALUE OF MAGNETORESISTIVE ELEMENT, AND COMPUTER SYSTEM

机译:制造磁致电阻元件的方法和装置,控制磁致电阻元件制造的软件和系统,用于估计磁致电阻元件的电阻值的软件以及计算机系统

摘要

Provided are a method and an apparatus for manufacturing a magnetoresistive element and a method and an apparatus for manufacturing a magnetic head which can reduce variation in properties of an magnetoresistive element and variation in the median of distribution.;Before starting polishing, wafer information containing various types of factors in a wafer stage which may have an influence on a resistance value of a final MR film is obtained, and an S value is calculated from the information by using a statistical scheme. During a polishing step, ongoing-work-information containing various types of factors in a polishing stage which may have an influence on the resistance value of the final MR film is obtained at regular intervals. A K value is calculated from the information by using the statistical scheme. Then, an MR resistance estimate during the polishing step is calculated from the S value and the K value. When the MR resistance estimate reaches a target resistance value , polishing is stopped.
机译:提供了一种磁阻元件的制造方法和装置以及磁头的制造方法和装置,其可以减少磁阻元件的特性变化和分布中值的变化。在开始抛光之前,包含各种信息的晶片信息获得可能影响最终MR膜的电阻值的晶片阶段中的多种类型的因素,并通过使用统计方案从该信息计算出S值。在抛光步骤中,以规则的间隔获得正在进行的工作信息,该工作信息包含在抛光阶段中可能影响最终MR膜的电阻值的各种类型的因素。通过使用统计方案从信息中计算出K值。然后,根据S值和K值计算出抛光步骤中的MR电阻估计值。当MR电阻估计值达到目标电阻值时,停止抛光。

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