首页> 外国专利> PROCESS FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELDS AT MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS

PROCESS FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELDS AT MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS

机译:在两种固体材料的分子粘附界面处揭示晶体缺陷和/或应力场的过程

摘要

PROBLEM TO BE SOLVED: To use a lattice in the order of nanometer or micrometer including stress fields and/or lattice defects; and thereby to make it possible to use the same.;SOLUTION: A process capable of revealing defects or stresses in a structure comprising: securing a face of a first element to a face of a second element by molecular adhesion so that the faces have offset with respect to a crystalline lattice and thereby forming a lattice including crystalline defects and/or stress fields in a crystalline zone next to the fixed interface; forming a thin film along the securing interface by reducing the thickness of one of the elements, the thickness of the thin film being prevented from causing the free surface of the thin film to reveal the crystalline defective lattices and/or stress fields, and the thickness of the thin film enabling subsequent steps; and processing the thin film so that the crystalline defective lattices and/or stress fields are revealed on the free surface of the thin film.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:使用纳米级或微米级的晶格,包括应力场和/或晶格缺陷;解决方案:一种能够揭示结构中的缺陷或应力的方法,该方法包括:通过分子粘合将第一元素的表面固定到第二元素的表面,以使这些表面偏移相对于晶格,从而在紧邻固定界面的晶区内形成包括晶格缺陷和/或应力场的晶格;通过减小元件之一的厚度沿着固定界面形成薄膜,防止了薄膜的厚度导致薄膜的自由表面暴露出晶体缺陷晶格和/或应力场,以及厚度薄膜的后续步骤;并对其进行处理,以便在薄膜的自由表面上露出结晶缺陷晶格和/或应力场。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008124480A

    专利类型

  • 公开/公告日2008-05-29

    原文格式PDF

  • 申请/专利权人 COMMISS ENERG ATOM;

    申请/专利号JP20070302263

  • 发明设计人 MAGNEA NOEL;MORICEAU HUBERT;FOURNEL FRANK;

    申请日2007-11-21

  • 分类号H01L21/02;B82B3/00;H01L21/265;H01L21/22;

  • 国家 JP

  • 入库时间 2022-08-21 20:22:16

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