MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP

摘要

PPROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. PSOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NHSB3/SBand NFSB3/SB. The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma. PCOPYRIGHT: (C)2008,JPO&INPIT