首页> 外国专利> THIN FILM PIEZOELECTRIC RESONATOR AND THIN FILM PIEZOELECTRIC FILTER USING THE SAME

THIN FILM PIEZOELECTRIC RESONATOR AND THIN FILM PIEZOELECTRIC FILTER USING THE SAME

机译:薄膜压电谐振器和薄膜压电谐振器使用相同的薄膜压电谐振器

摘要

PROBLEM TO BE SOLVED: To provide a thin film piezoelectric resonator having a high Q value in which generation of a transverse acoustic mode is suppressed.;SOLUTION: The thin film piezoelectric resonator includes: a piezoelectric resonance stack 12 having a piezoelectric layer 2 and an upper electrode 10 and a lower electrode 8 formed so as to be opposite to each other on both sides of the piezoelectric layer 2; a gap 4 formed under the piezoelectric resonance stack 12; and a substrate 6 supporting the piezoelectric resonance stack 12. The piezoelectric resonance stack 12 is comprised of: an oscillation area 18 in which the upper electrode 10 and the lower electrode 8 are opposite to each other via a piezoelectric layer 2 and located in accordance with the gap 4; a supporting area 22 which contacts the substrate; and a buffer area 20 located between the oscillation area 18 and the support area 22. The buffer area 20 is constituted so that a resonance frequency of primary thickness longitudinal vibration becomes lower than in the oscillation area 18. The piezoelectric layer 2 is comprised of materials indicating a dispersion curve of a high-frequency cutoff type. The buffer area 20 includes the oscillation area 18.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种具有高Q值的薄膜压电谐振器,其中抑制了横向声模的产生。解决方案:薄膜压电谐振器包括:压电谐振叠层12,其具有压电层2和压电层。上部电极10和下部电极8形成为在压电体层2的两侧彼此相对。在压电谐振层叠体12的下方形成有间隙4。压电谐振堆12包括:振动区域18,其中上电极10和下电极8经由压电层2彼此相对并且根据差距4;与基板接触的支撑区域22;振动区域20和位于振动区域18与支撑区域22之间的缓冲区域20构成。缓冲区域20被构成为使得一次厚度纵向振动的共振频率低于振动区域18中的振动频率。压电层2由材料构成。表示高频截止型的色散曲线。缓冲区20包括振荡区18; COPYRIGHT:(C)2008,JPO&INPIT

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