首页> 外国专利> THIN-FILM PIEZOELECTRIC RESONATOR MANUFACTURING METHOD, THIN-FILM PIEZOELECTRIC RESONATOR MANUFACTURING APPARATUS, THIN-FILM PIEZOELECTRIC RESONATOR, AND ELECTRONIC COMPONENT

THIN-FILM PIEZOELECTRIC RESONATOR MANUFACTURING METHOD, THIN-FILM PIEZOELECTRIC RESONATOR MANUFACTURING APPARATUS, THIN-FILM PIEZOELECTRIC RESONATOR, AND ELECTRONIC COMPONENT

机译:薄膜压电谐振器的制造方法,薄膜压电谐振器的制造装置,薄膜​​压电谐振器及电子零件

摘要

A method of manufacturing a piezoelectric thin film resonator (1) forms, after forming a piezoelectric film (4) on a substrate (2) so as to cover a lower electrode (3) formed on the substrate (2), an electrode material layer (6b) for forming an upper electrode (6) above the piezoelectric film (4), forms a mask (M3) of a predetermined form on the electrode material layer (6b), and then etches the electrode material layer (6b) to form the upper electrode (6). Before a step of forming the electrode material layer (6b), a protective layer (5) for protecting the piezoelectric film (4) during etching of the electrode material layer (6b) is formed so as to cover at least a part of the piezoelectric film (4) where the upper electrode (6) is not formed, and the electrode material layer (6b) is then formed so as to cover the protective layer (5).
机译:在基板(2)上形成压电膜(4)以覆盖形成在基板(2)上的下部电极(3)之后,形成压电薄膜谐振器(1)的方法。 (6b)用于在压电膜(4)上形成上电极(6),在电极材料层(6b)上形成预定形状的掩模(M3),然后蚀刻电极材料层(6b)以形成上电极(6)。在形成电极材料层(6b)的步骤之前,形成用于在电极材料层(6b)的蚀刻期间保护压电膜(4)的保护层(5),以覆盖压电材料的至少一部分。膜(4)上没有形成上电极(6),然后形成电极材料层(6b)以覆盖保护层(5)。

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