首页> 外国专利> COMPOSITION FOR FORMING SILICON-CONTAINING FILM, SILICON-CONTAINING FILM, SUBSTRATE WITH SILICON-CONTAINING FILM FORMED THEREON, AND PATTERN FORMING METHOD USING THE SAME

COMPOSITION FOR FORMING SILICON-CONTAINING FILM, SILICON-CONTAINING FILM, SUBSTRATE WITH SILICON-CONTAINING FILM FORMED THEREON, AND PATTERN FORMING METHOD USING THE SAME

机译:形成含硅膜的组合物,含硅膜,以其为基质的含硅膜的基质以及使用其的图案形成方法

摘要

PPROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film enabling good patterning of a photoresist film to be formed on a silicon-containing intermediate film which is formed by using the composition. PSOLUTION: The composition for forming a thermosetting silicon-containing film comprises (A-1) a silicon-containing compound prepared by effecting hydrolytic condensation of a hydrolyzable silicon compound using an acid catalyst and removing the acid catalyst from the obtained reaction mixture, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound using a basic catalyst and removing the basic catalyst from the obtained reaction mixture, (B) a compound expressed by formula (1): LSBa/SBHSBb/SBX (L is Li, Na, K, Rb or Cs; X is OH or an organic acid group; a is ≥1, b is 0 or ≥1, a+b is the number of hydroxy groups or organic acid groups) or formula (2): MA (M is sulfonium, iodonium or ammonium; A is a non-nucleophilic counter ion), (C) a 1-30C organic acid and (D) an organic solvent. PCOPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种用于形成含硅膜的组合物,该组合物使得能够在通过使用该组合物形成的含硅中间膜上形成光致抗蚀剂膜的良好图案。

溶液:用于形成热固性含硅膜的组合物包含(A-1)一种含硅化合物,该含硅化合物是通过使用酸催化剂对可水解硅化合物进行水解缩合并从所得反应混合物中除去酸催化剂而制备的。 (A-2)一种含硅化合物,其通过使用碱性催化剂对可水解硅化合物进行水解缩合并从所得反应混合物中除去碱性催化剂而获得,(B)由式(1)表示的化合物:L < SB> a H b X(L为Li,Na,K,Rb或Cs; X为OH或有机酸基团; a为&ge; 1,b为0或&ge ; 1,a + b是羟基或有机酸基团的数目)或式(2):MA(M是is,碘鎓或铵; A是非亲核抗衡离子),(C)a 1-30C有机酸和(D)有机溶剂。

版权:(C)2008,日本特许厅&INPIT

著录项

  • 公开/公告号JP2008019423A

    专利类型

  • 公开/公告日2008-01-31

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP20070141740

  • 申请日2007-05-29

  • 分类号C08L83/04;G03F7/26;G03F7/11;H01L21/027;C08K5/098;C08K5/36;C08K3/16;C08K5/19;C08K5/09;

  • 国家 JP

  • 入库时间 2022-08-21 20:21:35

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号