SAPPHIRE SINGLE CRYSTAL SUBSTRATE AND GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a sapphire single crystal substrate on whose surface a group III nitride-based compound semiconductor having improved crystallinity can be stacked; and to provide the group III nitride-based compound semiconductor obtained by using the substrate.;SOLUTION: The sapphire single crystal substrate is characterized in that the distribution of the variation of the lattice constant in the same plane of the sapphire crystal is within 0.002 Å. The group III nitride-based compound semiconductor is AlN, GaN or the like and expressed by general formula: Al_xGa_yIn_1-x-yN (wherein, 0≤x≤1, 0≤y≤1, and 0≤x+y≤1) and is used as a light-emitting element of an LED or the like. The group III nitride-based compound semiconductor is obtained by stacking on the sapphire single crystal substrate in which the distribution of the variation of the lattice constant in the same plane of the sapphire crystal is within 0.002 Å, and the obtained group III nitride-based compound semiconductor has uniform in-plane lattice constant and excellent crystallinity.;COPYRIGHT: (C)2008,JPO&INPIT