FORMULATION FOR REMOVAL OF PHOTORESIST, ETCH RESIDUE AND BOTTOM ANTIREFLECTION COATING (BARC), AND METHOD USING THE FORMULATION

摘要

PPROBLEM TO BE SOLVED: To provide a formulation for removal of a photoresist, an etch residue and a BARC, and also to provide a method including the formulation. PSOLUTION: The formulation for removing a photoresist, ion implanted photoresist, BARC and/or etch residue comprises an ammonium hydroxide, 2-aminobenzothiazole and remainder water. Preferably, the formulation comprises tetramethyl ammonium hydroxide by 1 to 15 mass%, tolyltriazole by 1 to 5 mass%, propylene glycol by 5 to 15 mass%, 2-aminobenzothiazole by 1 to 10 mass%, dipropylene glycol monomethylether by 20 to 45 mass%, and remainder water. The method for removing a material selected from a group consisting of photoresist, etch residue, BARC and combinations of these, from a substrate includes applying the above described formulation to the substrate to remove the material from the substrate. PCOPYRIGHT: (C)2008,JPO&INPIT