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Back incident die solid state image sensor

机译:背入射式固态图像传感器

摘要

PPROBLEM TO BE SOLVED: To prevent noise caused by the incidence of light to a charge reading section from being generated in a rear face incident type imaging device having a light detection section and the charge reading section. PSOLUTION: The rear face incident type imaging device for allowing incident light to be detected to enter from a rear side comprises: a silicon substrate having front and rear surfaces; a light detection section that is provided on the surface of the silicon substrate to detect the incident light as a charge; and the charge reading section that is provided on the surface of the silicon substrate for reading charge being detected by the light detection section as an electric signal. Further, rear face incident type imaging device comprises; a recess that is provided by etching the silicon substrate from a rear side while the rear surface of the recess has an opposite region that opposes the light detection section by pinching the silicon substrate having nearly a fixed film thickness; and a light shielding film for covering the rear side of the silicon substrate excluding the opposite region. PCOPYRIGHT: (C)2004,JPO
机译:

要解决的问题:为了防止在具有光检测部和电荷读取部的背面入射型成像装置中产生由光入射到电荷读取部引起的噪声。

解决方案:用于允许从后侧检测到入射光的背面入射型成像装置包括:具有前表面和后表面的硅基板;以及具有硅基板的硅基板。光检测部,其设置在硅基板的表面上,以将入射光检测为电荷。设置在硅基板的表面上的用于读取电荷的电荷读取部被光检测部检测为电信号。此外,背面入射型成像装置包括:凹部,通过从背面蚀刻硅基板而形成,该凹部的背面具有相对的区域,该相对区域通过捏住膜厚大致固定的硅基板而与光检测部相对。遮光膜,其覆盖硅基板​​的相反侧区域以外的背面。

版权:(C)2004,日本特许厅

著录项

  • 公开/公告号JP4165129B2

    专利类型

  • 公开/公告日2008-10-15

    原文格式PDF

  • 申请/专利权人 三菱電機株式会社;

    申请/专利号JP20020182108

  • 发明设计人 鹿間 省三;中西 淳治;

    申请日2002-06-21

  • 分类号H01L27/14;H01L31/10;H01L27/146;

  • 国家 JP

  • 入库时间 2022-08-21 20:21:07

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