首页> 外国专利> Graphite heater and apparatus for producing a single crystal and single crystal manufacturing method for producing a single crystal

Graphite heater and apparatus for producing a single crystal and single crystal manufacturing method for producing a single crystal

机译:石墨加热器和用于生产单晶的设备以及用于生产单晶的单晶制造方法

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal with a high efficiency, in the case of raising the crystal in a specified no fault region or in a specified fault region.;SOLUTION: In this method of manufacturing a single crystal by Czochralski method, a graphite heater for manufacturing the single crystal is at least equipped with a terminal part where electric current is supplied and a cylindrical heating part by resistance heating, and located to encircle a crucible containing a feed melt liquid. The heating part is equipped with a heating slit part alternatively with upper slits coming down from its top and lower slits coming up from its bottom, and the upper slits and the lower slits comprise longer ones and shorter ones, and the heating distribution of the heating part is changed by making the number of the shorter upper slits more than the number of the shorter lower slits.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:要解决的问题:在指定的无故障区域或指定的故障区域内提晶的情况下,要提供高效的硅单晶。解决方案:采用Czochralski方法制造单晶的方法如图1所示,用于制造单晶的石墨加热器至少包括:端子部,其通过电阻加热而被供给电流;以及圆筒状的加热部,其被包围成包围容纳有原料熔融液的坩埚。加热部分装备有加热狭缝部分,其交替地具有从其顶部下降的上部狭缝和从其底部上升的下部狭缝,并且上部狭缝和下部狭缝包括较长的狭缝和较短的狭缝,并且加热的热量分布通过使短的上狭缝的数量大于短的下狭缝的数量来改变部分。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP4134800B2

    专利类型

  • 公开/公告日2008-08-20

    原文格式PDF

  • 申请/专利权人 信越半導体株式会社;

    申请/专利号JP20030111694

  • 发明设计人 櫻田 昌弘;添田 聡;

    申请日2003-04-16

  • 分类号C30B15/14;C30B29/06;

  • 国家 JP

  • 入库时间 2022-08-21 20:20:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号