首页>
外国专利>
End point detection possible plasma etching method and plasma etching apparatus
End point detection possible plasma etching method and plasma etching apparatus
展开▼
机译:终点检测可能的等离子体蚀刻方法和等离子体蚀刻装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF 6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF 6 gas; and a small-amount supply step of supplying a small amount of SF 6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
展开▼