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GERMANIUM-DOPED GALLIUM NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

机译:掺锗氮化镓晶体及其制备方法

摘要

PROBLEM TO BE SOLVED: To easily and stably obtain high luminance germanium-doped gallium nitride crystals of high quality as a phosphor material at a low cost.;SOLUTION: Solid digallium trioxide (Ga2O3) is thermally reduced using a reducing agent, so as to produce digallium monoxide (Ga2O) gas. Solid germanium dioxide (GeO2) is thermally reduced using a reducing agent, so as to produce germanium monoxide (GeO) gas. Digallium monoxide is brought into reaction with ammonia (NH3)-containing gas in the presence of the germanium monoxide gas, so as to produce germanium (Ge)-doped gallium nitride (GaN) crystals.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:以低成本简单,稳定地获得高品质的高亮度掺锗氮化镓晶体作为磷光体材料。解决方案:固体三氧化二镓(Ga 2 O 使用还原剂对3 进行热还原,生成一氧化二镓(Ga 2 O)气体。使用还原剂对固态二氧化锗(GeO 2 )进行热还原,从而生成一氧化锗(GeO)气体。一氧化二镓在一氧化锗气体的存在下与含氨(NH 3 )的气体发生反应,从而制得掺锗(Ge)的氮化镓(GaN)晶体。 :(C)2008,JPO&INPIT

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