METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTING MASK BLANK FOR EUV LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a reflecting multilayer film of a reflective mask blank for EUV lithography which is capable of preventing deformation of a substrate to provide the substrate having proper flatness, even if stresses are applied to the substrate by deposition of the reflective multilayer film, and a method for producing the EUV mask blank which is capable of preventing deformation of a substrate to provide the substrate with proper flatness, even if stress is applied to the substrate by the deposition of a buffer layer and an absorption layer.;SOLUTION: A method for depositing on a substrate, a reflecting multilayer film of a reflecting mask blank for EUV lithography by sputtering comprises depositing a reflecting multilayer film, in a state where a substrate has been deformed so as to be subjected to a stress, which is directed in the direction opposite to the stress applied to the substrate by the implementation of deposition of the reflective multilayer film; and returning the substrate to the shape prior to deformation, after the deposition of the reflecting multilayer film.;COPYRIGHT: (C)2008,JPO&INPIT