首页> 外国专利> METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

机译:用于EUV光刻的反射性多层膜的反射多层膜的沉积方法和用于EUV光刻的反射性多层膜的制造方法

摘要

A method for depositing, on a substrate, a reflective multilayer film of a reflective mask blank for EUV lithography by sputtering, comprises: depositing a reflective multilayer film in such a state that a substrate has been deformed so as to be subjected to a stress, which is directed to the opposite direction to a stress applied to the substrate by deposition of the reflective multilayer film; and returning the substrate to the shape before deformation, after deposition of the reflective multilayer film.
机译:一种用于通过溅射在基板上沉积用于EUV光刻的反射掩模坯料的反射多层膜的方法,该方法包括:以使基板变形以承受应力的状态沉积反射多层膜;其方向与通过反射多层膜的沉积而施加到基板上的应力的方向相反;在反射性多层膜的沉积之后,使基板恢复变形之前的形状。

著录项

  • 公开/公告号EP1945829A1

    专利类型

  • 公开/公告日2008-07-23

    原文格式PDF

  • 申请/专利权人 ASAHI GLASS COMPANY LIMITED;

    申请/专利号EP20060823435

  • 发明设计人 SUGIYAMA TAKASHI;

    申请日2006-11-09

  • 分类号C23C14/02;C23C14/34;B24B37/00;G03F1/00;

  • 国家 EP

  • 入库时间 2022-08-21 19:55:38

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