depositing a reflective multilayer film in such a state that a substrate has been deformed so as to be subjected to a stress, which is directed to the opposite direction to a stress applied to the substrate by deposition of the reflective multilayer film; andreturning the substrate to the shape before deformation, after deposition of the reflective multilayer film."/> METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
首页> 外国专利> METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

METHOD FOR DEPOSITING REFLECTIVE MULTILAYER FILM OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND METHOD FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

机译:用于EUV光刻的反射性多层膜的反射多层膜的沉积方法和用于EUV光刻的反射性多层膜的制造方法

摘要

A method for depositing, on a substrate, a reflective multilayer film of a reflective mask blank for EUV lithography by sputtering, comprises:depositing a reflective multilayer film in such a state that a substrate has been deformed so as to be subjected to a stress, which is directed to the opposite direction to a stress applied to the substrate by deposition of the reflective multilayer film; andreturning the substrate to the shape before deformation, after deposition of the reflective multilayer film.
机译:一种通过溅射在EUV光刻上在基板上沉积反射掩模毛坯的反射多层膜的方法,该方法包括: 以这样的状态沉积反射多层膜,即基板已经变形以承受应力,该应力的方向与通过反射多层沉积而施加到基板上的应力的方向相反电影;和 ,并在沉积多层反射膜之后将基板恢复为变形前的形状。 < / UnorderedList>

著录项

  • 公开/公告号US2008153010A1

    专利类型

  • 公开/公告日2008-06-26

    原文格式PDF

  • 申请/专利权人 TAKASHI SUGIYAMA;

    申请/专利号US20080034319

  • 发明设计人 TAKASHI SUGIYAMA;

    申请日2008-02-20

  • 分类号G03F1;

  • 国家 US

  • 入库时间 2022-08-21 20:14:16

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