It is low, the dielectricity tangential material and low being the dielectricity which possesses the dielectricity tangent of mannered null 0.50

摘要

PPROBLEM TO BE SOLVED: To provide a low dielectric dissipation material having high corrosion resistance and relatively low dielectric dissipation factor and to control the dielectric dissipation factor of a silicon carbide sintered compact. PSOLUTION: The low dielectric dissipation material is constituted so that the dielectric dissipation factor of the sintered compact is controlled by controlling the quantity of boron nitride to be blended in raw material powder forming the silicon carbide sintered compact by sintering. The quantity of boron nitride to be blended in the silicon carbide raw material powder is controlled to 1.0 wt.%. PCOPYRIGHT: (C)2004,JPO