Inside the reaction container which possesses the pressure which is higher than production manner and crystal production device null atmospheric pressure

摘要

PROBLEM TO BE SOLVED: To produce a group III nitride crystal having a sufficiently large crystal size without complicating the process or using an expensive reactor and further without making the crystal size small. ;SOLUTION: The crystal growing device has a reactor 101 in which a group III nitride crystal is grown from a molten liquid 102 containing at least a group III metal, a flux and a nitrogen raw material. Further, the crystal growing device is equipped with a seed crystal holding means 104 for holding a seed crystal 103 of the group III nitride, flux supplying means 106, 108, 110 for supplying the flux while controlling the vapor pressure of the flux, and nitrogen supplying means 111, 112 for supplying the nitrogen raw material while controlling the pressure of the gaseous nitrogen. The area where the seed crystal 103, the molten liquid 102 and the nitrogen raw material are brought into contact with one another can be moved by moving the seed crystal holding means 104.;COPYRIGHT: (C)2001,JPO