2 luminous flux interference exposure devices, 2 luminous flux interference exposure methods, production method, and semiconductor luminous element of semiconductor luminous element

摘要

2 time harmonic of the Ar laser, or, it designates 4 time harmonic of the ND dope YAG laser as the illuminant, quite being homogeneous by the etalon and the Haami long board, it actualizes 2 luminous flux interference exposure devices which can form the laser beam whose coherence is high. In addition it exposes periodic pattern in the photoresist mask with the above-mentioned 2 luminous flux interference exposures, develops the photoresist mask, it does the pattern formation of the mask for semiconductor layer etching resist pattern as the mask, after the resist removing, it does that the semiconductor luminous element whose quite energy conversion efficiency is high low at cost with the process which etches the optical removal aspect, is produced.