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Notable Enhancement of Phase Transition Performance and Luminous Transmittance in VO2 Films via Simple Method of Ar/O Plasma Post-Treatment

机译:通过Ar / O等离子体后处理的简单方法显着提高VO2薄膜的相变性能和透光率

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摘要

Ar/O plasma irradiation is proposed for post-treatment of vanadium dioxide (VO2) films. Oxidation and surface migration were observed in the VO2 films following irradiation. This combined effect leads to an effective stoichiometry refinement and microstructure reconstruction in the interfacial area. A notable improvement in luminous transmittance and an enhancement in phase transition performance of the treated VO2 films were achieved. Compared with that of as-deposited VO2 films, the electrical phase transition amplitude of treated films increased more than two-fold. The relative improvement in luminous transmittance (380–780 nm) is 47.4% (from 25.1% to 37%) and the increase in solar transmittance is 66.9% (from 29.9% to 49.9%), which is comparable to or better than the previous work using anti-reflection (AR) coatings or doping methods. The interfacial boundary state proved to be crucial and Ar/O plasma irradiation offers an effective approach for further refinement of thermochromic VO2 films.
机译:提出了Ar / O等离子体辐射用于二氧化钒(VO2)薄膜的后处理。辐照后在VO2薄膜中观察到氧化和表面迁移。这种综合作用导致界面区域有效的化学计量细化和微观结构重建。获得了经处理的VO 2膜的透光率的显着提高和相变性能的增强。与沉积的VO2薄膜相比,处理后的薄膜的电相变幅度增加了两倍以上。透光率(380–780 nm)的相对改善为47.4%(从25.1%到37%),日光透射率的增加为66.9%(从29.9%到49.9%),与之前的水平相当或更好使用减反射(AR)涂层或掺杂方法进行工作。界面边界状态被证明是至关重要的,并且Ar / O等离子体辐照为进一步改进热致变色VO2薄膜提供了有效的方法。

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