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Notable Enhancement of Phase Transition Performance and Luminous Transmittance in VO 2 Films via Simple Method of Ar/O Plasma Post-Treatment

机译:通过Ar / O等离子后处理的简单方法显着提高VO 2薄膜的相变性能和透光率

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Ar/O plasma irradiation is proposed for post-treatment of vanadium dioxide (VO 2 ) films. Oxidation and surface migration were observed in the VO 2 films following irradiation. This combined effect leads to an effective stoichiometry refinement and microstructure reconstruction in the interfacial area. A notable improvement in luminous transmittance and an enhancement in phase transition performance of the treated VO 2 films were achieved. Compared with that of as-deposited VO 2 films, the electrical phase transition amplitude of treated films increased more than two-fold. The relative improvement in luminous transmittance (380–780 nm) is 47.4% (from 25.1% to 37%) and the increase in solar transmittance is 66.9% (from 29.9% to 49.9%), which is comparable to or better than the previous work using anti-reflection (AR) coatings or doping methods. The interfacial boundary state proved to be crucial and Ar/O plasma irradiation offers an effective approach for further refinement of thermochromic VO 2 films.
机译:提出了Ar / O等离子体辐射用于二氧化钒(VO 2)薄膜的后处理。照射后在VO 2膜中观察到氧化和表面迁移。这种综合作用导致界面区域有效的化学计量细化和微观结构重建。处理后的VO 2膜的透光率显着提高,相变性能提高。与沉积的VO 2薄膜相比,处理后的薄膜的电相变幅度增加了两倍以上。透光率(380–780 nm)的相对改善为47.4%(从25.1%到37%),日光透射率的增加为66.9%(从29.9%到49.9%),与之前的水平相当或更好使用减反射(AR)涂层或掺杂方法进行工作。界面边界状态被证明是至关重要的,并且Ar / O等离子体辐照为进一步细化热致变色VO 2膜提供了有效的方法。

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