Dissolving the ruthenium chloride hydrate and the rhenium chloride in the 1st solvent which consists of ruthenium content thin film null ethanol, isopropanol or the methanol which are obtained by the ruthenium compound and the said chemical compound which for organicity metal

摘要

PROBLEM TO BE SOLVED: To provide a ruthenium compound for an organometallic chemical vapor deposition method by which proper film deposition rate can be obtained by an organometallic chemical vapor deposition method using a solid sublimation process and also to provide a ruthenium-containing thin film having excellent step coverage characteristics and surface morphology and superior electrical properties.;SOLUTION: In this ruthenium compound for an organometallic chemical vapor deposition method, 10 to 100 ppm rhenium is incorporated into a ruthenium compound composed of bis(cyclopentadienyl)ruthenium complex.;COPYRIGHT: (C)2003,JPO