The excitation light source which generates the excited light which excites the sample of the semiconductor

摘要

PROBLEM TO BE SOLVED: To easily evaluate the internal electric field intensity, film thickness, and band gap energy of an epitaxial wafer.;SOLUTION: At spectroscopic measurement on a semiconductor multi-layer film, exciting light is irradiated to a semiconductor multi-layer film sample, and light emission from the sample is passed through the spectroscope and detected. Then the spectroscope is swept, and the detected intensity of light emission is recorded as a function of photon energy. In addition, white light is made incident onto the spectroscope. Light emergent from the spectroscope is made incident onto the sample. With the sample irradiated with external modulated light, the spectroscope is swept. Reflected light from the sample is detected, and a detected reflectance spectrum is recorded as a function of photon energy.;COPYRIGHT: (C)2004,JPO&NCIPI