METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING KrF LIGHT SOURCE

摘要

A semiconductor device manufacturing method using a KrF light source is disclosed. Embodiments relate to a method for manufacturing a semiconductor device including forming an oxide film over a semiconductor substrate. A gate conductor may be formed over the oxide film. An antireflective film may be formed over the gate conductor. A photoresist film may be formed over the antireflective film. The photoresist film may be photo-etched, thereby forming a first photoresist film pattern having a first line width. The antireflective film may be etched, using the first photoresist film pattern as a mask, thereby forming an antireflective film pattern. The first photoresist film pattern may be simultaneously laterally etched, thereby forming a second photoresist film pattern having a second line width corresponding to a final design value for the gate conductor. The gate conductor and the oxide film may be etched, using the second photoresist film pattern and the antireflective film pattern as a mask, thereby forming a gate conductor pattern and an oxide film pattern. The photo-etching to form the first photoresist film pattern may be executed, using a KrF light source. Accordingly, it is possible to provide a method for manufacturing a semiconductor device for a 100 nm line width or lower, using a KrF light source, without using an ArF light source requiring the use of expensive equipment and a specific photoresist material.