Integrated Nitride and Silicon Carbide-Based Devices and Methods of Fabricating Integrated Nitride-Based Devices

摘要

Monolithic electronic devices including a common nitride epitaxial layer are provided. A first type of nitride device is provided on the common nitride epitaxial layer including a first at least one implanted n-type region on the common nitride epitaxial layer. The first at least one implanted n-type region has a first doping concentration greater than a doping concentration of the common nitride epitaxial layer. A second type of nitride device, different from the first type of nitride device, including a second at least one implanted n-type region is provided on the common nitride epitaxial layer. The second at least one implanted n-type region is different from the first at least one implanted n-type region and has a second doping concentration that is greater than the doping concentration of the common nitride epitaxial layer. A first plurality of electrical contacts are provided on the first at least one implanted n-type region. The first plurality of contacts define a first electronic device of the first type of nitride device. A second plurality of electrical contacts are provided on the second at least one n-type implanted region. The second plurality of contacts define a second electronic device of the second type of electronic device. Corresponding methods are also disclosed.