Reduced glitch dynamic logic circuit and method of synthesis for complementary oxide semiconductor (CMOS) and strained/unstrained silicon-on-insulator (SOI)

摘要

The present invention implements structures and method for non-delayed clock dynamic logic circuit configurations with output and/or complementary output with reduced glitch and/or mitigating adverse charge-sharing effects for Complementary Oxide Semiconductor (CMOS) and/or mitigating parasitic bipolar action in Strained/Unstrained Silicon-On-Insulator (SOI) circuits, where insulator may be oxide, nitride of Silicon and the like or Sapphire and the like including a method of synthesis.