Integration method of inversion oxide (TOXinv) thickness reduction in CMOS flow without added pattern

摘要

A method of manufacturing a CMOS semiconductor comprising, forming shallow trench isolation regions in a workpiece, depositing a gate oxide layer on top of the workpiece, depositing a polysilicon layer on top of the gate oxide, performing VT_N patterning, performing first series of adjusted implantations, performing post implantation cleaning, performing VT_P patterning, performing a second series of adjusted implantations, performing the post implantation cleaning, performing a well implant damage anneal; patterning gate, etching gate, and performing back end of line processing.