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TECHNIQUES FOR CALCULATING CIRCUIT BLOCK DELAY AND TRANSITION TIMES INCLUDING TRANSISTOR GATE CAPACITANCE LOADING EFFECTS

机译:计算电路块延迟和过渡时间的技术,其中包括晶体管栅极电容的负载效应

摘要

Techniques for modeling delay and transition times of logical circuit blocks including transistor gate capacitance loading effects provides improved simulation of logical circuit block transition times and delay times. The non-linear behavior of transistor gates of other logical circuit block inputs that are connected to the logical circuit block output is taken into account by a transition time function and a delay time function that are each separately dependent on static capacitance and transistor gate capacitance and can be used to determine logical circuit block timing and output performance. A separate N-channel and P-channel gate capacitance may also be used as inputs to the transition time and delay time functions to provide further improvement, or a ratio of N-channel to P-channel capacitances may alternatively be used as input to the transition time and delay time functions.
机译:用于对逻辑电路模块的延迟和过渡时间建模的技术(包括晶体管栅极电容负载效应)可改善逻辑电路模块的过渡时间和延迟时间的仿真。连接到逻辑电路块输出的其他逻辑电路块输入的晶体管栅极的非线性行为通过过渡时间函数和延迟时间函数加以考虑,它们分别取决于静态电容和晶体管栅极电容以及可用于确定逻辑电路块的时序和输出性能。单独的N沟道和P沟道栅极电容也可以用作过渡时间和延迟时间功能的输入,以提供进一步的改善,或者N沟道电容与P沟道电容之比也可以用作输入。过渡时间和延迟时间功能。

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